Serial SRAM是为串行接口的SRAM，外扩SRAM可以通过使用SPI的接口来将外部RAM添加到几乎所有应用中。与传统并行SRAM相比，这些串行器件具有更低的功耗和更少的I/O连接。一个小巧、能够只扮演缓存的角色、并能使用最小数量的引脚相连的外置SRAM。串行SRAM就是专为满足这个要求而量身定做的。存储器在高速性能并非最重要因素的其它存储器(DRAM、闪存等)中，串行接口已经取代了并行接口。由于存在需要SRAM的应用，串行SRAM在SRAM市场中一直处于小众地位。在空间非常有限的特定应用中，它们一直是低功耗、小尺寸替代方案。

超级RAM™

• 通过 12 针 HyperBus™ 接口减少信号针数

• 1.8V 和 3V 选项均高达 200MHz

• DDR 操作可实现 333MB/s 的最大吞吐量

• 工业、扩展和汽车
  （-40 至 105°C）温度可用

• 6mm x 8mm TFBGA 封装

  Den	Org	Part Number	Buy	Vcc	Speed(MHz)	Pkg(Pins)	Status	Models	Comment/Previous Rev.
  32M	4Mx8	IS66WVH4M8FALL, IS67WVH4M8FALL		1.7-1.95V	200	BGA(24)	S=NOW	IBIS
  	4Mx8	IS66WVH4M8FBLL, IS67WVH4M8FBLL		2.7-3.6V	200	BGA(24)	S=NOW	IBIS
  64M	8Mx8	IS66WVH8M8FALL, IS67WVH8M8FALL		1.7-1.95V	200	BGA(24)	S=NOW	IBIS	IS66/67WVH8M8ALL, IS66/67WVH8M8DALL
  	8Mx8	IS66WVH8M8FBLL, IS67WVH8M8FBLL		2.7-3.6V	200	BGA(24)	S=NOW	IBIS	IS66/67WVH8M8BLL, IS66/67WVH8M8DBLL
  	8Mx8	IS66WVH8M8EDALL, IS67WVH8M8EDALL		1.7-1.95V	166	BGA(24)	Prod	IBIS	ECC Based
  	8Mx8	IS66WVH8M8EDBLL, IS67WVH8M8EDBLL		2.7-3.6V	133	BGA(24)	Prod	IBIS	ECC Based
  128M	16Mx8	IS66WVH16M8DALL, IS67WVH16M8DALL		1.7-1.95V	200	BGA(24)	Prod	IBIS	IS66/67WVH16M8ALL
  	16Mx8	IS66WVH16M8DBLL, IS67WVH16M8DBLL		2.7-3.6V	166	BGA(24)	Prod	IBIS	IS66/67WVH16M8BLL
  	16Mx8	IS66WVH16M8EDALL, IS67WVH16M8EDALL		1.7-1.95V	166	BGA(24)	Prod	IBIS	ECC Based
  	16Mx8	IS66WVH16M8EDBLL, IS67WVH16M8EDBLL		2.7-3.6V	133	BGA(24)	Prod	IBIS	ECC Based
  256M	32Mx8	IS66WVH32M8DALL, IS67WVH32M8DALL		1.7-1.95V	200	BGA(24)	Prod	IBIS
  	32Mx8	IS66WVH32M8DBLL, IS67WVH32M8DBLL		2.7-3.6V	166	BGA(24)	Prod	IBIS
  512M	64Mx8	IS66WVH64M8DALL, IS67WVH64M8DALL		1.7-1.95V	200	BGA(24)	Prod	IBIS
  	64Mx8	IS66WVH64M8DBLL, IS67WVH64M8DBLL		2.7-3.6V	200	BGA(24)	Prod	IBIS