Serial SRAM是为串行接口的 SRAM ，外扩SRAM可以通过使用SPI的接口来将 外部RAM添加到几乎所有应用中。与传统并行SRAM相比，这些串行器件具有更低的功耗和更少的I/O连接。一个小巧、能够只扮演缓存的角色、并能使用最小数量的引脚相连的外置SRAM。串行SRAM就是专为满足这个要求而量身定做的。存储器在高速性能并非最重要因素的其它存储器(DRAM、闪存等)中，串行接口已经取代了并行接口。由于存在需要SRAM的应用，串行SRAM在SRAM市场中一直处于小众地位。在空间非常有限的特定应用中，它们一直是低功耗、小尺寸替代方案。
串行 SRAM 和串行 RAM
512K IS62WVS0648FALL x1, x2, x4 1.65~2.2V 16MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS0648FBLL x1, x2, x4 2.2V~3.6V 20MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS0648GALL x1, x2, x4 1.65~2.2V 30MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS0648GBLL x1, x2, x4 2.7~3.6V 45MHz -40 to 125°C SOIC(8) Prod Serial SRAM 1M IS62WVS1288FALL x1, x2, x4 1.65~2.2V 16MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS1288FBLL x1, x2, x4 2.2~3.6V 20MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS1288GALL x1, x2, x4 1.65~2.2V 30MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS1288GBLL x1, x2, x4 2.7~3.6V 45MHz -40 to 125°C SOIC(8) Prod Serial SRAM 2M IS62WVS2568FALL x1, x2, x4 1.65~2.2V 16MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS2568FBLL x1, x2, x4 2.2~3.6V 20MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS2568GALL x1, x2, x4 1.65~2.2V 30MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS2568GBLL x1, x2, x4 2.7~3.6V 45MHz -40 to 125°C SOIC(8) Prod Serial SRAM 4M IS62WVS5128FALL x1, x2, x4 1.65~2.2V 16MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS5128FBLL x1, x2, x4 2.2~3.6V 20MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS5128GALL x1, x2, x4 1.65~2.2V 30MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS62WVS5128GBLL x1, x2, x4 2.7~3.6V 45MHz -40 to 125°C SOIC(8) Prod Serial SRAM IS61WV25616LEBLL x16 2.4~3.6V 12, 15ns -40 to 125°C TSOP2(44), BGA(48) Prod Latched SRAM IS61WV25616MEBLL x16 2.4~3.6V 10, 12ns -40 to 125°C TSOP2(44), BGA(48) Prod Muxed SRAM 8M IS66WVS1M8ALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM IS66WVS1M8BLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM IS66WVQ2M4DALL, x4 1.65-1.95V 200 MHz -40 to 125°C BGA(24) Prod Serial QUADRAM IS66WVQ2M4DBLL, x4 2.7-3.6V 133 MHz -40 to 125°C BGA(24) Prod Serial QUADRAM IS66WVQ2M4EDALL, x4 1.65-1.95V 200 MHz -40 to 105°C BGA(24) Prod Serial QUADRAM, ECC Based IS66WVQ2M4EDBLL, x4 2.7-3.6V 133 MHz -40 to 105°C BGA(24) Prod Serial QUADRAM, ECC Based 16M IS66WVS2M8ALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM IS66WVS2M8BLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM IS66WVQ4M4DALL, x4 1.65~1.95V 200 MHz -40 to 125°C BGA(24) Prod Serial QUADRAM IS66WVQ4M4DBLL, x4 2.7~3.6V 166 MHz -40 to 125°C BGA(24) Prod Serial QUADRAM IS66WVQ4M4EDALL, x4 1.65~1.95V 200 MHz -40 to 105°C BGA(24) Prod Serial QUADRAM, ECC Based IS66WVQ4M4EDBLL, x4 2.7~3.6V 133 MHz -40 to 105°C BGA(24) Prod Serial QUADRAM, ECC Based 32M IS66WVS4M8ALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM IS66WVS4M8BLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM IS66WVR4M8ALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM, Continuous Operation IS66WVR4M8BLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) Prod Serial RAM, Continuous Operation IS66WVQ8M4DALL, x4 1.65~1.95V 200 MHz -40 to 125°C BGA(24) Prod Serial QUADRAM IS66WVQ8M4DBLL, x4 2.7~3.6V 166 MHz -40 to 125°C BGA(24) Prod Serial QUADRAM 64M IS66WVS8M8FALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) S=NOW Serial RAM IS66WVS8M8FBLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) S=NOW Serial RAM IS66WVR8M8FALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) S=NOW Serial RAM, Continuous Operation IS66WVR8M8FBLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) S=NOW Serial RAM, Continuous Operation IS66WVQ16M4FALL, x4 1.65~1.95V 200 MHz -40 to 125°C BGA(24) S=NOW Serial QUADRAM IS66WVQ16M4FBLL, x4 2.7~3.6V 200 MHz -40 to 125°C BGA(24) S=NOW Serial QUADRAM 128M IS66WVS16M8FALL, x1, x4 1.65~1.95V 104 MHz -40 to 105°C SOIC(8) S=1H/2025 Serial RAM IS66WVS16M8FBLL, x1, x4 2.7~3.6V 104 MHz -40 to 105°C SOIC(8) S=1H/2025 Serial RAM
